Apparatuses and methods for performing wear leveling operations

ABSTRACT

Apparatuses and methods for commands to perform wear leveling operations are described herein. An example apparatus may include a memory configured to receive a wear leveling command and to perform a wear leveling operation responsive to the wear leveling command. The memory may further be configured to recommend a wear leveling command be provided to the memory responsive to a global write count exceeding a threshold. The global write count may be indicative of a number of write operations performed by the memory since the memory performed a wear leveling operation.

BACKGROUND

Memories may be included in a variety of apparatuses, such as computersor other devices, including but not limited to portable memory devices,solid state drives, personal digital assistants, music players, cameras,phones, wireless devices, displays, chip sets, set top boxes, gamingsystems, vehicles, and appliances. Memories may be volatile, where poweris needed to store date, and non-volatile, where data is stored even ifpower is not provided to the memory, or combinations of volatile andnon-volatile memory. There are many different types of volatile andnon-volatile memory including random-access memory (RAM), read onlymemory (ROM), dynamic random access memory (DRAM), synchronous dynamicrandom access memory (SDRAM), flash memory, and resistance variablememory, among others.

Memories, such as resistance variable memory devices, may be used asnon-volatile memory for a wide range of electronic devices. Resistancevariable memory devices may include, for example, phase change memory(PCM) or resistive memory, among others. In some instances, it may bedesirable to use PCM to implement random access memory. As a result ofthe limitations of using PCM as RAM replacement, operation of PCMs inmemory systems may be restricted and/or require additional mechanismsfor operation. For example, blocks of PCMs may be limited to arelatively low number of write operations compared to RAM and mayrequire additional housekeeping mechanisms (e.g., wear levelingoperations, refresh operations) to ensure feasible RAM replacement.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus according to an embodiment ofthe present invention.

FIG. 2 is a table illustrating example bit assignments of a flag statusregister according to an embodiment of the present invention.

FIG. 3 is a block diagram of a memory according to an embodiment of thepresent invention.

FIG. 4 is a flowchart of a method for performing a wear levelingoperation according to an embodiment of the present invention.

FIG. 5A is a schematic diagram of an initial block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

FIG. 5B is a schematic diagram of an intermediate block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

FIG. 5C is a schematic diagram of an intermediate block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

FIG. 5D is a schematic diagram of an intermediate block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

FIG. 5E is a schematic diagram of an intermediate block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

FIG. 5F is a schematic diagram of a final block address mappingarrangement during a wear leveling operation according to an embodimentof the present invention.

DETAILED DESCRIPTION

Apparatuses and methods for commands to perform wear leveling operationsare described herein. Certain details are set forth below to provide asufficient understanding of embodiments of the invention. However, itwill be clear to one having skill in the art that embodiments of theinvention may be practiced without these particular details. Moreover,the particular embodiments of the present invention described herein areprovided by way of example and should not be used to limit the scope ofthe invention to these particular embodiments. In other instances,well-known circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the invention.

FIG. 1 is a block diagram of an apparatus 100 according to an embodimentof the present invention. The apparatus may comprise circuitry, one ormore semiconductor die, a packaged semiconductor, a device includingsuch circuitry, die, or package, and/or a system including such adevice. The apparatus 100 may include a host 110 (e.g., memorycontroller) and a memory 120. The host 110 and the memory 120 may becoupled by a command and address (CA) bus 130 and a data bus 135. Thememory 120 may be configured to receive commands and/or addresses fromthe host 110 over the CA bus 130, and the memory may be configured toreceive information and/or provide information over the bus 135. Theinformation received and provided over the bus 135 may include data tobe stored by the memory 120 and/or to be provided from memory, forexample. Although the host 110 and memory 120 are described as providingsignals over the CA bus 130 and the data bus 135, in some examples, asingle bus may be used to provide signals. For example, in at least oneembodiment, the host 110 may be configured to provide commands,addresses, and data to the memory 120 and receive data from the memory120, over a single, shared bus.

The memory 120 may be configured to perform operations (e.g., readoperations, write operations, or wear leveling operations) in responseto received memory commands and/or addresses provided by the host 110.By way of example, the memory 120 may provide data to the host 110 overthe data bus 135 responsive to a read command, and may store datareceived over the data bus 135 responsive to a write command. As anotherexample, the memory 120 may perform a wear leveling operation responsiveto a wear leveling command, described further below.

The memory 120 may further provide information to the host 110 over thedata bus 135. Information provided by the memory 120 to the host 110may, for instance, be included in an acknowledgement provided to thehost 110 in response to one or more commands. Acknowledgements may, forinstance, be provided following a variable latency period. Withreference to FIG. 2, the table 200 illustrates example bit assignmentsfor acknowledgements provided by the memory 120 to the host 110.Generally, an acknowledgement may include information associated with await state, e.g., whether a variable latency has ended, and/or mayinclude information associated with one or more current instructions. Byway of example, an acknowledgement may indicate that a command, such asa read command or write command, has been accepted and that the memory120 will perform the command (e.g., “001”). An acknowledgement furthermay indicate that an error, such as a lock error, has occurred during aprevious operation (e.g., “101”). Additionally or alternatively, anacknowledgement may indicate that the memory 120 recommends that thehost 110 provide a wear leveling command (e.g., “011”).

In some examples, the memory 120 may be configured to track writeoperations performed by the memory 120. In particular, the memory 120may track a “global write count,” or the number of write operationsperformed by the memory 120 since the memory 120 last performed a wearleveling operation. Once the global write count has exceeded athreshold, the memory 120 may recommend the host 110 provide a wearleveling command. In some instances, the memory 120 may selectivelyignore wear leveling commands based on the global write count. Thememory 120 may, for instance, ignore wear leveling commands if theglobal write count does not exceed a threshold.

Additionally or alternatively, in some examples, the memory 120 may beconfigured to track a number of write operations performed on each blockof an array associated with the memory 120. In particular, the memory120 may track a “local write count” for each block, or a number of writeoperations performed by the memory 120 on each block since the memory120 last performed a wear leveling operation. Once a local write counthas exceeded a threshold, the memory 120 may recommend the host 110provide a wear leveling command, and in some instances, the memory 120may selectively ignore wearing commands based on the local write count.In this manner, the memory 120 may recommend the host 110 provide a wearleveling command in response to performing an operation at a particularblock (e.g., maximum cycled block) a particular number of times sincelast performing a wear leveling operation.

FIG. 3 is a block diagram of a memory 300 according to an embodiment ofthe present invention. The memory 300 may be used to implement, at leastin part, the memory 120 of FIG. 1. The memory 300 may include a memorycontrol unit 310, a buffer 320, an array 330, and a flag status register350. The memory 300 may include elements that have been previouslydescribed with respect to the apparatus 100 of FIG. 1. Those elementshave been identified in FIG. 3 using the same reference numbers used inFIG. 1 and operation of the common elements is as previously described.Consequently, a detailed description of the operation of these elementswill not be repeated in the interest of brevity.

The memory control unit 310 may be configured to control operation ofthe one or more components of the memory 300. By way of example, thememory control unit 310 may be coupled to the buffer 320 and the array330 and may be configured to control operation of the buffer 320 and thearray 330. The memory control unit 310 may be configured to receivecommands and addresses from the CA bus 130 and the buffer 320 may beconfigured to receive information from the data bus 135 and provideinformation to the data bus 135. The memory control unit 310 may beconfigured to cause data (e.g., write data or read data) to be providedbetween the buffer 320 and the array 330 over the data bus 340 inresponse to received commands and addresses. For example, in response toa write command, the memory control unit 310 may cause write data to beprovided from the buffer 320 to the array 330. Similarly, in response toa read command, the memory control unit 310 may cause read data to beprovided from the array 330 to the buffer 320.

The memory control unit 310 may further be configured to perform wearleveling operations. Generally, the memory control unit 310 may beconfigured to perform wear leveling operations in accordance with staticwear leveling, dynamic wear leveling, or a combination thereof.Accordingly, performing a wear leveling operation may includereallocating data between various blocks of the memory array 330 and/orreassigning one or more addresses (e.g., block addresses) correspondingthereto. In some examples, performing a wear leveling operation mayinclude storing addresses in one or more address registers 312. Theaddress registers 312 may be volatile or non-volatile registers and maybe included in the memory control unit 310, as illustrated, and/or maybe located in one or more other components of the memory 300.

The memory control unit 310 may include wear leveling logic 315 forperforming a wear leveling operation. The wear leveling logic 315 may beimplemented in hardware, software, or combinations thereof. By way ofexample, the memory control unit 310 may be implemented, at least inpart, using a controller, and the wear leveling logic 315 may be storedin non-volatile memory of the controller as one or morecomputer-readable instructions executable by one or more processingunits (e.g., processors) of the memory control unit 310.

In some embodiments, the memory control unit 310 may further beconfigured to set one or more status bits of a register. For example,the memory control unit 310 may be configured to set a bit of the flagstatus register 350 having a logic state indicating whether a wearleveling operation is being performed (e.g., the bit of the flag statusregister 350 having a logic state of “I”). In another example, thememory control unit 310 may be configured to set a bit of the flagstatus register 350 indicating whether a wear leveling operation isrecommended (e.g., the bit of the flag status register 350 having alogic state of “1”). Acknowledgements provided to the host 110 may bebased on one or more bits of the flag status register, and accordingly,whether an acknowledgement recommends the host 110 provide a wearleveling command may be based on a bit of the flag status register 350.The bit of the flag status register 350 indicating whether a wearleveling operation is recommended may be set by the memory control unit310 based on a number of write commands performed since a wear levelingoperation was last performed. Additionally or alternatively, the logicstate of the bit written by the memory control unit 310 may be set basedon an amount of time since a wear leveling operation was performed. Thememory 110 may provide information indicative of the state of each bitof the flag status register 350 in response to a read flag statusregister (RFSR) command to the memory 300.

As described, the memory 300 may track (e.g., count) a global writecount indicative of the number of write operations performed by thememory 300 since a wear leveling operation was last performed by thememory 300 and/or may track local write counts indicative of the numberof write operations performed at each block of an array associated withthe memory 300, such as the array 330. By way of example, the globalwrite count and/or the local write counts may be tracked using a counter311 located in the memory control unit 310. Responsive to the globalwrite count and/or a local write count exceeding a threshold, the memorycontrol unit 310 may recommend the host 110 provide a wear levelingcommand. In some examples, the counter 311 may alternatively be storedin the buffer 320, or any other component of the memory 300.

Further, while the memory control unit 310 may perform wear levelingoperations in response to commands provided by the host 110, in someinstances the memory control unit 310 may automatically perform wearleveling operations. By way of example, the memory control unit 310 mayperform a wear leveling operation in response to the global write countexceeding a threshold. The global write count threshold causing thememory control unit 310 to automatically perform a wear levelingoperation may exceed the global write count threshold causing the memorycontrol unit 310 to recommend the host 110 provide a wear levelingcommand. As an example, a global write count of 10,000 write operationsmay cause the memory control unit 310 to recommend the host 110 providea wear leveling command, for instance by setting a bit of the flagstatus register 350 having an appropriate logic state, and a globalwrite count of 100,000 write operations may cause the memory controlunit to automatically perform a wear leveling operation. As anotherexample, the memory control unit 310 may perform a wear levelingoperation in response to a local write count exceeding a threshold. Alocal write count threshold causing the memory control unit 310 toautomatically perform a wear leveling operation may exceed the localwrite count threshold causing the memory control unit 310 to recommendthe host 110 provide a wear leveling command. In other examples, thememory control unit 310 may not automatically perform wear levelingoperations, or the memory control unit 310 may be configured toselectively perform wear leveling operations automatically, forinstance, based on a control signal or command provided by the host 110.

The array 330 may comprise any array known in the art, now or in thefuture, and as described, may be divided into blocks. The array 330 mayinclude a volatile portion of memory, a non-volatile portion of memory(e.g., PCM memory), or a combination thereof. The array 330 may includea data structure for tracking various attributes of the array 330 overtime. By way of example, the array 330 may include an address map 332that includes information specifying the relationship between logicaladdresses of the array 330 and physical addresses of the array 330. Thelogical addresses may be related to the addresses provided to the memoryby the host, such as the addresses associated with a read command and awrite command. As another example, the array 330 may include a writecount map 334 that includes information that may indicate a number ofwrite operations performed on each block of the array 330, for instance,over a life of the array 330. In some examples, the address map 332 andthe write count map 334 may additionally or alternatively be stored inthe memory control unit 310. The memory control unit 310 may beconfigured to read and/or modify the address map 332 and the write countmap 334.

FIG. 4 is a flowchart 400 of a method for performing a wear levelingoperation according to an embodiment of the present invention. Themethod may be implemented using a memory control unit, such as thememory control unit 310 and of FIG. 3, and an array, such as the array330 of FIG. 3. The method 400 is described herein with reference toFIGS. 5A-5F which may further illustrate block address mappingarrangements during a wear leveling operation. Each of the FIGS. 5A-5Fillustrate an address map 502, a physical array 504, a write count map506, and address registers 508. The address map 502 stores logicaladdresses 502 LOG0-LOG7 and associated physical addresses 502PHYS0-PHYS7. The address map 502, write count map 506, and registers 508may be used to implement the address map 332, the write count map 334,and the address registers 312 of FIG. 3, respectively. For example,logical address LOG4 corresponds to physical address PHYS4 that at agiven time may point to BLOCK3, the write count of which is stored inCOUNT3.

At step 405, the memory control unit 310 may identify a maximum cycledblock and a spare block of the array 504. The maximum cycled block maybe a block having a highest write count of each of the blocks array 504as indicated by the write count map 506. The spare block may be anyblock in the array 504 that may be used as a spare wear leveling block.The spare block may be any block not storing any data and/or blocksdesignated as not storing persistent data.

With reference to FIG. 5A, identifying the maximum cycled block and aspare block may include identifying a logical address and/or physicaladdress in the address map 502 for each of the maximum cycled block andspare block. By way of example, the memory control unit 310 may identifya highest count in the write count map 506, the write count NM, toidentify the maximum cycled block of the array 504. In some examples,the maximum cycled block may be identified from blocks of the array 504designated as swappable. A block may be designated as swappable, forinstance, based on a “swap write count” of the block, or a number ofwrite operations performed on the block since the block was lastassigned a new block address (e.g., logical block address) in accordancewith a wear leveling operation. By way of example, in at least oneembodiment, a block may be designated as swappable when a swap writecount of the block exceeds a threshold. The swap write count of eachblock may be stored in the write count map 506 and/or in one or moreregisters (not shown).

In turn, the memory control unit 310 may identify a logical address LBAMand a physical address PBAM in the address map 502 associated with theidentified maximum cycled block. Similarly, the memory control unit 310may identify a spare block and identify a logical address SPARE and aphysical address PBAi associated with the identified spare block. Atstep 410, the memory control unit 310 may store the logical address LBAMand the physical address PBAM in the address registers 508. Asillustrated in FIG. 5A, the maximum cycled block is BLOCK0 and the spareblock is BLOCK6 of the array 504.

With reference to FIG. 5B, at step 415, the memory control unit 310 maycopy data stored in the maximum cycled block BLOCK0 to the spare blockBLOCK6, and at step 420, the memory control unit 310 may update (e.g.,increment) the write count NS associated with the spare block BLOCK6.

With reference to FIG. 5C, at step 425, the memory control unit 310 mayassign the addresses stored in the address registers 508, in particular,the logical address LBAM and the physical address PBAM. The addressesmay be assigned such that the logical address SPARE is associated withthe physical address PBAM and the logical address LBAM is associatedwith the physical address PBAi. In this manner, the physical addressesmapped to the logical addresses LBAM, SPARE may be switched relative tothe arrangement of FIG. 5A. Accordingly, the maximum cycled block BLOCK0of the array 504 may be assigned as the spare block of the array 504.

At step 430, the memory control unit 310 may identify a minimum cycledblock. The minimum cycled block may be a block having a lowest writecount of each of the blocks BLOCK0-BLOCK7 of array 504 as indicated bythe write count map 506. With reference to FIG. 5D, identifying theminimum cycled block may include identifying a logical address and/orphysical address for the minimum cycled block. By way of example, thememory control unit 310 may identify a lowest count in the write countmap 506, the write count Nm, to identify the minimum cycled block of thearray 504. BLOCK3 is identified in FIG. 5D as the minimum cycled blockof the array 504. In turn, the memory control unit 310 may identify alogical address LBAm and a physical address PBAm in the address map 502associated with the identified minimum cycled block. At step 435, thememory control unit 310 may store the logical address LBAm and thephysical address PBAm in the address registers 508.

With reference to FIG. 5E, at step 440, the memory control unit 310 maycopy data stored in the minimum cycled block to the spare block, and atstep 445, may update the write count NM associated with the spare block.

With reference to FIG. 5F, at step 450, the memory control unit 310 mayassign the addresses stored in the address registers 508, the logicaladdress LBAm and the physical address PBAm. The addresses may beassigned such that the logical address SPARE is associated with thephysical address PBAm and the logical address LBAm is associated withthe physical address PBAM. In this manner, the physical addresses mappedto the logical addresses LBAm, SPARE may be switched relative to thearrangement of FIG. 5D. Accordingly, the minimum cycled block BLOCK3 ofthe array 504 may be assigned as the spare block of the array 504.

Accordingly, the memory control unit 310 may perform a wear levelingoperation such that the logical address LBAm may be associated with thephysical address PBAM and thus the maximum cycled block of the array504. Additionally, the logical address SPARE may be associated with thephysical address PBAm and thus the minimum cycled block BLOCK3 of thearray 504, and the logical address LBAM may be associated with thephysical address PBAi and thus becoming the spare block of the array504. Assigning addresses in this manner may, for instance, more evenlydistribute write operations among blocks BLOCK0-BLOCK7 of the array 504and thereby provide prolonged operation of the array 504.

While the method 400 has been described as including particular steps ina particular order, in some examples, steps of the method 400 may beperformed in any order and further may include additional steps and/oromit one or more described steps. In some examples, for instance, themaximum and minimum cycled blocks may be identified at a same time andlogical and/or physical addresses of the maximum and minimum cycledblocks may be stored simultaneously in address registers 508.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

What is claimed is:
 1. An apparatus, comprising: a memory configured toreceive a wear leveling command and to perform a wear leveling operationresponsive to the wear leveling command, the memory further configuredto recommend a wear leveling command be provided to the memoryresponsive to at least one of a global write count or a local writecount exceeding a threshold, the global write count indicative of anumber of write operations performed by the memory since the memoryperformed a wear leveling operation and the local write count indicativeof a number of write operations performed on a block of the memory sincethe memory performed a wear leveling operation.
 2. The apparatus ofclaim 1, further comprising: a host coupled to the memory and configuredto provide the wear leveling command responsive to the memoryrecommending a wear leveling command be provided to the memory.
 3. Theapparatus of claim 1, wherein the memory is further configured torecommend a wear leveling command be provided to the memory using anacknowledgement, the memory configured to provide the acknowledgementresponsive to a memory command.
 4. The apparatus of claim 1, wherein thememory is configured to perform the wear leveling operation inaccordance with static wear leveling, dynamic wear leveling, or acombination thereof.
 5. The apparatus of claim 1, wherein the thresholdis a first threshold and wherein the memory is further configured toautomatically perform a wear leveling operation responsive to the globalwrite count exceeding a second threshold greater than or equal to thefirst threshold.
 6. The apparatus of claim 1, wherein the memory isfurther configured to set a state of a bit of a flag status register toa first state when the memory is performing the wear leveling operationand to set the state of the bit of the flag status register to a secondstate when the memory is not performing the wear leveling operation. 7.The apparatus of claim 1, wherein the memory is configured to receivethe wear leveling command using a first bus and to recommend a wearleveling command be provided to the memory using a second bus.
 8. Anapparatus, comprising: an array; and a memory control unit coupled tothe array and configured to receive a wear leveling command and toperform a wear leveling operation responsive to the wear levelingcommand, the memory control unit further configured to perform the wearleveling operation such that a logical address associated with a maximumcycled block of the array is assigned to a spare block of the array anda logical address associated with a minimum cycled block of the array isassigned to the maximum cycled block of the array.
 9. The apparatus ofclaim 8, further comprising: a flag status register including a bitindicative of whether the memory control unit is performing a wearleveling operation, wherein the memory control unit is furtherconfigured to place the bit in a first state when the memory controlunit is performing the wear leveling operation and to place the bit in asecond state when the memory control unit completes the wear levelingoperation.
 10. The apparatus of claim 9, wherein the memory control unitis further configured to provide the state of the bit responsive to aread flag status register command.
 11. The apparatus of claim 8, whereinthe memory control unit is configured to automatically perform a wearleveling operation responsive to a global write count exceeding athreshold.
 12. The apparatus of claim 8, wherein the memory control unitis configured to automatically perform a wear leveling operationresponsive to a local write count exceeding a threshold.
 13. Theapparatus of claim 8, wherein the memory control unit is configured toidentify the logical address associated with the maximum cycled block ofthe array and the logical address associated with the minimum cycledblock of the array using an address map, wherein the memory control unitincludes a plurality of address registers configured to store thelogical address associated with the maximum cycled block of the arrayand the logical address associated with the minimum cycled block of thearray during the wear leveling operation.
 14. The apparatus of claim 8,wherein the array comprises non-volatile memory.
 15. The apparatus ofclaim 8, wherein memory control unit is configured to identify themaximum cycled block of the array and the minimum cycled block of thearray using a count map of the array.
 16. The apparatus of claim 8,wherein the memory control unit is configured to selectively ignore thewear leveling command based on a global write count.
 17. The apparatusof claim 8, wherein the memory control unit includes wear leveling logicfor performing the wear leveling operation.
 18. The apparatus of claim8, wherein the array comprises: an address map configured to map thelogical address associated with the maximum cycled block of the array toa physical address of a first block of the array and to map the logicaladdress associated with the minimum cycled block of the array to aphysical address of a second block of the array.
 19. The apparatus ofclaim 8, wherein the array comprises: a write count map indicative of anumber of write operations performed on each block of the array over alife of the array.
 20. An apparatus, comprising: a memory configured torecommend a wear leveling command be provided to the memory responsiveto at least one of performing a first number of write operations sinceperforming a wear leveling operation or performing a second number ofwrite operations on a block of the memory since performing the wearleveling operation.
 21. The apparatus of claim 20, wherein the firstnumber of write operations is greater than the second number of writeoperations.
 22. The apparatus of claim 20, further comprising: a hostcoupled to the memory and configured to provide the wear levelingcommand responsive to the memory recommending a wear leveling command beprovided to the memory.
 23. The apparatus of claim 20, wherein thememory is further configured to recommend a wear leveling command beprovided to the memory using an acknowledgement, the memory configuredto provide the acknowledgement responsive to a command.
 24. Theapparatus of claim 20, wherein the block comprises a maximum cycledblock.
 25. The apparatus of claim 20, wherein the memory is furtherconfigured to automatically perform the wear leveling operationresponsive to at least one of performing a third number of writeoperations since performing a wear leveling operation or performing afourth number of write operations on the block of the memory sinceperforming a wear leveling operation, wherein the third number of writeoperations is greater than the first number of write operations and thefourth number of write operations is greater than the second number ofwrite operations.
 26. A method, comprising: determining whether at leastone of a global write count or a local write count exceeds a threshold,the global write count indicative of a number of write operationsperformed by a memory since the memory performed a wear levelingoperation and the local write count indicative of a number of writeoperations performed on a block of the memory since the memory performeda wear leveling operation; receiving a wear leveling command; if the atleast one of the global write count or the local write count does notexceed the threshold, ignoring the wear leveling command; and if the atleast one of the global write count or the local write count exceeds thethreshold, performing a wear leveling operation in accordance with thewear leveling command.
 27. The method of claim 26, wherein receiving awear leveling command comprises: receiving the wear leveling commandfrom a host over a command and address bus.
 28. The method of claim 26,wherein performing a wear leveling operation in accordance with the wearleveling command comprises: performing the wear leveling operation inaccordance with static wear leveling, dynamic wear leveling, or acombination thereof.
 29. The method of claim 26, further comprising: ifthe at least one of the global write count or the local write countexceeds the threshold, recommending a wear leveling command be providedto the memory.
 30. The method of claim 29, wherein recommending a wearleveling command be provided to the memory comprises: setting a bit of aflag status register of the memory.
 31. The method of claim 26, furthercomprising: providing an acknowledgement responsive to a memory command,the acknowledgement indicative of whether providing a wear levelingcommand is recommended.
 32. A method, comprising: receiving a wearleveling command; and selectively performing a wear leveling operationresponsive to the wear leveling command, the wear leveling operationincluding: identifying a maximum cycled block, a minimum cycled block,and a spare block of an array; assigning a logical address of theminimum cycled block to a physical address of the maximum cycled block,assigning a logical address of the spare block to a physical address ofthe minimum cycled block; and assigning a logical address of the maximumcycled block to a physical address of the spare block.
 33. The method ofclaim 32, wherein identifying a maximum cycled block, a minimum cycledblock, and a spare block of an array comprises: identifying a highestwrite count and a lowest write count of a count map of an array.
 34. Themethod of claim 32, wherein selectively performing a wear levelingoperation responsive to the wear leveling command comprises: determiningwhether a global write count exceeds a threshold.
 35. The method ofclaim 32, further comprising: providing an acknowledgment recommending ahost provide the wear leveling command.
 36. The method of claim 32,wherein assigning a logical address of an address map to a physicaladdress of the address map, the address map stored in non-volatilememory of an array.
 37. The method of claim 32, wherein identifying amaximum cycled block, a minimum cycled block, and a spare block of anarray includes identifying the maximum cycled block from a plurality ofblocks designated as swappable.